| 8803160 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
Björn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner, Peter Friedrichs |
2014-08-12 |
| 8492772 |
Homoepitaxial growth of SiC on low off-axis SiC wafers |
Christer Hallin, Björn Magnusson, Peder Bergman |
2013-07-23 |
| 8097524 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
Björn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner, Peter Friedrichs |
2012-01-17 |
| 7531433 |
Homoepitaxial growth of SiC on low off-axis SiC wafers |
Christer Hallin, Björn Magnusson, Peder Bergman |
2009-05-12 |
| 7482068 |
Lightly doped silicon carbide wafer and use thereof in high power devices |
Björn Magnusson, Asko Vehanen, Dietrich Stephani, Heinz Mitlehner, Peter Friedrichs |
2009-01-27 |
| 7361222 |
Device and method for producing single crystals by vapor deposition |
Erik Janzen, Peter Raback |
2008-04-22 |
| 7018597 |
High resistivity silicon carbide single crystal |
Nguyen Tien Son, Björn Magnusson, Erik Janzen |
2006-03-28 |