Issued Patents All Time
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10230018 | Substrate used for III-V-nitride growth and manufacturing method thereof | Genru Yuan, Ming Xi, Yue Ma | 2019-03-12 |
| 6861271 | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) | Soo Jin Chua, Peng Li, Ji-Guang Zhang | 2005-03-01 |
| 6645885 | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) | Soo Jin Chua, Peng Li, Ji-Guang Zhang | 2003-11-11 |