YN

Yoshinobu Nakatani

Infineon Technologies Ag: 3 patents #2,452 of 7,486Top 35%
UE University Of Electro-Communications: 2 patents #20 of 199Top 15%
CN CNRS: 2 patents #1,756 of 11,908Top 15%
UP Université Paris-Sud: 2 patents #30 of 307Top 10%
KU Kyoto University: 2 patents #286 of 1,688Top 20%
AS Altis Semiconductor, Snc: 2 patents #5 of 27Top 20%
Samsung: 1 patents #49,284 of 75,807Top 70%
OU Osaka University: 1 patents #681 of 1,984Top 35%
TU Tokyo Metropolitan University: 1 patents #51 of 128Top 40%
AS Altis Semiconductor: 1 patents #7 of 35Top 20%
Overall (All Time): #832,600 of 4,157,543Top 25%
6
Patents All Time

Issued Patents All Time

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
10840435 Magnetic tunnel junction device and magnetic resistance memory device Yoshiaki Sonobe 2020-11-17
8345473 Ferromagnetic thin wire element Teruo Ono 2013-01-01
7952915 Core-rotating element of ferromagnetic dot and information memory element using the core of ferromagnetic dot Teruo Ono, Shinya Kasai, Kensuke Kobayashi, Hiroshi Kohno, Gen Tatara 2011-05-31
7630231 Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell Jacques Miltat, Ulrich Klostermann 2009-12-08
7315467 Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell Jacques Miltat 2008-01-01
7061797 Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell Jacques Miltat 2006-06-13