Issued Patents All Time
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5208772 | Gate EEPROM cell | Chung H. Lam | 1993-05-04 |
| 4369072 | Method for forming IGFET devices having improved drain voltage characteristics | Paul E. Bakeman, Jr., Andres G. Fortino, Henry J. Geipel, Jr., Robert Quinn | 1983-01-18 |