Issued Patents All Time
Showing 26–50 of 108 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10867625 | Spin transfer torque (STT) device with template layer for Heusler alloy magnetic layers | Zheng Gao, Masahiko Hashimoto, Sangmun Oh, Hua Ai Zeng | 2020-12-15 |
| 10839833 | Spin transfer torque device with oxide layer beneath the seed layer | Masahiko Hashimoto, Zheng Gao, Susumu Okamura | 2020-11-17 |
| 10762917 | Reversed mode spin torque oscillator with shaped field generation layer | Quang Le, Yongchul Ahn, Susumu Okamura, Zheng Gao, Alexander Goncharov +2 more | 2020-09-01 |
| 10734013 | Spin transfer torque (STT) device with multilayer seed layers for magnetic recording and memory | Zheng Gao, Masahiko Hashimoto, Susumu Okamura | 2020-08-04 |
| 10643643 | Spin torque oscillator device including a high damping field generation layer or a damping enhancing capping layer | Zheng Gao, Susumu Okamura | 2020-05-05 |
| 10566015 | Spin transfer torque (STT) device with template layer for heusler alloy magnetic layers | Zheng Gao, Masahiko Hashimoto, Sangmun Oh, Hua Al Zeng | 2020-02-18 |
| 10460752 | Spin-torque oscillator with multilayer seed layer between the write pole and the free layer in a magnetic recording write head | Zheng Gao, Masahiko Hashimoto, Sangmun Oh | 2019-10-29 |
| 10446175 | Spin transfer torque device with oxide layer beneath the seed layer | Susumu Okamura, Masahiko Hashimoto, Zheng Gao | 2019-10-15 |
| 10121500 | Magnetic tunnel junction (MTJ) free layer damping reduction | Zheng Gao | 2018-11-06 |
| 10026426 | Magnetic tunnel junction (MTJ) free layer damping reduction | Zheng Gao | 2018-07-17 |
| 9911439 | Magnetic tunnel junction (MTJ) free layer damping reduction | Zheng Gao | 2018-03-06 |
| 9831419 | Magnetoresistive device with laminate insertion layer in the free layer | Zheng Gao | 2017-11-28 |
| 9734850 | Magnetic tunnel junction (MTJ) free layer damping reduction | Zheng Gao | 2017-08-15 |
| 9570100 | Two-dimensional magnetic recording device with center shield stabilized by recessed AFM layer | Zheng Gao, Stefan Maat | 2017-02-14 |
| 9349391 | Controlling magnetic layer anisotropy field by oblique angle static deposition | Zheng Gao | 2016-05-24 |
| 9318133 | Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field | Zheng Gao, Chando Park | 2016-04-19 |
| 9177588 | Recessed IRMN reader process | Ying Hong, Cherngye Hwang, Stefan Maat, Masaya Nishioka, David J. Seagle +4 more | 2015-11-03 |
| 9099124 | Tunneling magnetoresistive (TMR) device with MgO tunneling barrier layer and nitrogen-containing layer for minimization of boron diffusion | Zheng Gao | 2015-08-04 |
| 9099120 | Interlayer coupling field control in tunneling magnetoresistive read heads | Zheng Gao | 2015-08-04 |
| 9030785 | Narrow read-gap head with recessed afm | Zheng Gao | 2015-05-12 |
| 9001473 | TMR/CPP reader for narrow reader gap application | Zheng Gao, Kuok San Ho, Ching Hwa Tsang, Kochan Ju | 2015-04-07 |
| 8958180 | Capping materials for magnetic read head sensor | Chando Park, Zheng Gao, Sangmun Oh, Susumu Okamura | 2015-02-17 |
| 8772076 | Back contact diffusion barrier layers for group ibiiiavia photovoltaic cells | Mustafa Pinarbasi, Jorge Vasquez | 2014-07-08 |
| 8318530 | Solar cell buffer layer having varying composition | Bulent M. Basol, Mustafa Pinarbasi | 2012-11-27 |
| 8300367 | Magnetoresistance sensors pinned by an etch induced magnetic anisotropy | Mustafa Pinarbasi | 2012-10-30 |