Issued Patents All Time
Showing 26–36 of 36 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7230282 | III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer | — | 2007-06-12 |
| 7196399 | Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density | Akira Usui, Yuichi Oshima | 2007-03-27 |
| 7189588 | Group III nitride semiconductor substrate and its manufacturing method | Akira Usui, Yuichi Oshima | 2007-03-13 |
| 7118934 | Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate | Yuichi Oshima | 2006-10-10 |
| 7097920 | Group III nitride based semiconductor substrate and process for manufacture thereof | Akira Usui, Yuichi Oshima | 2006-08-29 |
| 7057204 | III-V group nitride system semiconductor substrate | — | 2006-06-06 |
| 7045808 | III-V nitride semiconductor substrate and its production lot, and III-V nitride semiconductor device and its production method | — | 2006-05-16 |
| 6924159 | Semiconductor substrate made of group III nitride, and process for manufacture thereof | Akira Usui, Yuichi Oshima | 2005-08-02 |
| 6824610 | Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate | Naotaka Kuroda | 2004-11-30 |
| 6812051 | Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure | Akira Usui, Yuichi Oshima | 2004-11-02 |
| 6270569 | Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method | Takashi Furuya | 2001-08-07 |