| 5429958 |
Process for forming twin well CMOS integrated circuits |
— |
1995-07-04 |
| 5247199 |
Process for forming twin well CMOS integrated circuits |
— |
1993-09-21 |
| 5185292 |
Process for forming extremely thin edge-connectable integrated circuit structure |
Nicolaas W. VanVonno |
1993-02-09 |
| 5071792 |
Process for forming extremely thin integrated circuit dice |
Nicolaas W. VanVonno |
1991-12-10 |
| 4908683 |
Technique for elimination of polysilicon stringers in direct moat field oxide structure |
Richard L. Lichtel, Jr., Lawrence G. Pearce |
1990-03-13 |
| 4829359 |
CMOS device having reduced spacing between N and P channel |
Kenneth K. O, Lawrence G. Pearce |
1989-05-09 |
| 4814285 |
Method for forming planarized interconnect level using selective deposition and ion implantation |
Richard L. Lichtel, Jr. |
1989-03-21 |
| 4716071 |
Method of ensuring adhesion of chemically vapor deposited oxide to gold integrated circuit interconnect lines |
Bruce Edmunds Roberts, Jimmy C. Black |
1987-12-29 |
| 4713260 |
Method of ensuring adhesion of chemically vapor deposited oxide to gold integrated circuit interconnect lines |
Bruce Edmunds Roberts, Jimmy C. Black |
1987-12-15 |
| 4702000 |
Technique for elimination of polysilicon stringers in direct moat field oxide structure |
Richard L. Lichtel, Jr., Lawrence G. Pearce |
1987-10-27 |
| 4624749 |
Electrodeposition of submicrometer metallic interconnect for integrated circuits |
Jimmy C. Black, Bruce Edmunds Roberts |
1986-11-25 |
