Issued Patents All Time
Showing 26–50 of 50 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9537514 | High oversampling ratio dynamic element matching scheme for high dynamic range digital to RF data conversion for cellular communications | Timothy J. Talty, Zhiwei Xu, Mohiuddin Ahmed, Cynthia D. Baringer, Albert E. Cosand +2 more | 2017-01-03 |
| 9531571 | Agile radio architecture | Zhiwei Xu, Yen-Cheng Kuan, Donald A. Hitko, Joseph F. Jensen | 2016-12-27 |
| 9515068 | Monolithic integration of GaN and InP components | Pamela R. Patterson, Keisuke Shinohara, Hasan Sharifi, Wonill Ha, Tahir Hussain +1 more | 2016-12-06 |
| 9508552 | Method for forming metallic sub-collector for HBT and BJT transistors | Donald A. Hitko, Yakov Royter, Pamela R. Patterson | 2016-11-29 |
| 9383266 | Test structure to monitor the in-situ channel temperature of field effect transistors | Tahir Hussain | 2016-07-05 |
| 9099397 | Fabrication of self aligned base contacts for bipolar transistors | — | 2015-08-04 |
| 9087854 | Thermal management for heterogeneously integrated technology | Wonill Ha, Hasan Sharifi, Tahir Hussain, Pamela R. Patterson | 2015-07-21 |
| 8957455 | Modulation doped super-lattice base for heterojunction bipolar transistors | Marko Sokolich, Tahir Hussain, David H. Chow | 2015-02-17 |
| 8860092 | Metallic sub-collector for HBT and BJT transistors | Donald A. Hitko, Yakov Royter, Pamela R. Patterson | 2014-10-14 |
| 8587037 | Test structure to monitor the in-situ channel temperature of field effect transistors | Tahir Hussain | 2013-11-19 |
| 8575659 | Carbon-beryllium combinationally doped semiconductor | Steven S. Bui, Tahir Hussain | 2013-11-05 |
| 8178946 | Modulation doped super-lattice base for heterojunction bipolar transistors | Marko Sokolich, Tahir Hussain, David H. Chow | 2012-05-15 |
| 7868335 | Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs | Marko Sokolich, Tahir Hussain, David H. Chow | 2011-01-11 |
| 7582536 | Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same | Rajesh D. Rajavel, Mary Y. Chen, Steven S. Bui, David H. Chow, Mehran Mokhtari +1 more | 2009-09-01 |
| 7531851 | Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same | Rajesh D. Rajavel, Mary Y. Chen, Steven S. Bui, David H. Chow, Mehran Mokhtari +1 more | 2009-05-12 |
| 7470619 | Interconnect with high aspect ratio plugged vias | Mary Y. Chen, Philip H. Lawyer, Marko Sokolich | 2008-12-30 |
| 7354820 | Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating | Richard L. Pierson, Jr., Berinder Brar, John A. Higgins | 2008-04-08 |
| 6958491 | Bipolar transistor test structure with lateral test probe pads | Berinder Brar, John A. Higgins | 2005-10-25 |
| 6949776 | Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating | Richard L. Pierson, Jr., Berinder Brar, John A. Higgins | 2005-09-27 |
| 6870184 | Mechanically-stable BJT with reduced base-collector capacitance | Richard L. Pierson, Jr., Berinder Brar, John A. Higgins | 2005-03-22 |
| 6858887 | BJT device configuration and fabrication method with reduced emitter width | Richard L. Pierson, Jr., Berinder Brar, John A. Higgins | 2005-02-22 |
| 6815237 | Testing apparatus and method for determining an etch bias associated with a semiconductor-processing step | Richard L. Pierson, Jr., Berinder Brar | 2004-11-09 |
| 6800531 | Method of fabricating a bipolar transistor | Richard L. Pierson, Jr., Berinder Brar, John A. Higgins | 2004-10-05 |
| 6797995 | Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector | Richard L. Pierson, Jr., Berinder Brar, John A. Higgins | 2004-09-28 |
| 6605825 | Bipolar transistor characterization apparatus with lateral test probe pads | Berinder Brar, John A. Higgins | 2003-08-12 |