HY

Hyuck Soo Yang

Globalfoundries: 1 patents #2,221 of 4,424Top 55%
GU Globalfoundries U.S.: 1 patents #344 of 665Top 55%
Micron: 1 patents #4,761 of 6,345Top 80%
Samsung: 1 patents #49,284 of 75,807Top 70%
📍 Boise, ID: #1,368 of 3,546 inventorsTop 40%
🗺 Idaho: #2,529 of 8,810 inventorsTop 30%
Overall (All Time): #1,068,906 of 4,157,543Top 30%
4
Patents All Time

Issued Patents All Time

Showing 1–4 of 4 patents

Patent #TitleCo-InventorsDate
12199094 Apparatuses including Finfets having different gate oxide configurations, and related computing systems Byung Yoon Kim, Yong Yang, Shivani Srivastava 2025-01-14
11522068 IC product comprising an insulating gate separation structure positioned between end surfaces of adjacent gate structures Jiehui Shu, Chang Seo Park, Shimpei Yamaguchi, Tao Han, Yong Yang +1 more 2022-12-06
10453936 Methods of forming replacement gate structures on transistor devices Jiehui Shu, Chang Seo Park, Shimpei Yamaguchi, Tao Han, Yong Yang +1 more 2019-10-22
8507997 Mask read-only memory having a fake select transistor Seung-Jin Yang, Yong Tae Kim, Jung-Ho Moon 2013-08-13