NT

Naoyoshi Tamura

FL Fujitsu Semiconductor Limited: 30 patents #6 of 1,301Top 1%
Fujitsu Limited: 9 patents #3,538 of 24,456Top 15%
FL Fujitsu Microelectronics Limited: 7 patents #8 of 624Top 2%
MO Molex: 4 patents #392 of 1,726Top 25%
SO Socionext: 4 patents #56 of 541Top 15%
📍 Yokohama, IL: #6 of 17 inventorsTop 40%
Overall (All Time): #47,636 of 4,157,543Top 2%
54
Patents All Time

Issued Patents All Time

Showing 26–50 of 54 patents

Patent #TitleCo-InventorsDate
8247284 Manufacture of semiconductor device with stress structure 2012-08-21
8232180 Manufacturing method of semiconductor device comprising active region divided by STI element isolation structure 2012-07-31
8207042 Semiconductor device and method of manufacturing the same Yosuke Shimamune, Masahiro Fukuda, Young Suk Kim, Akira Katakami, Akiyoshi Hatada +1 more 2012-06-26
8164085 Semiconductor device and production method thereof Yosuke Shimamune, Hiroyuki Ohta, Akiyoshi Hatada, Akira Katakami 2012-04-24
8158498 P-channel MOS transistor and fabrication process thereof Masashi Shima, Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami 2012-04-17
8134189 Semiconductor device and method of manufacturing the same 2012-03-13
8071435 Manufacture of semiconductor device with stress structure 2011-12-06
7968414 Semiconductor device and production method thereof Hiroyuki Ohta, Takashi Sakuma, Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami 2011-06-28
7968920 Semiconductor device and manufacturing method thereof 2011-06-28
7875521 Semiconductor device and production method thereof Yosuke Shimamune, Hiroyuki Ohta, Akiyoshi Hatada, Akira Katakami 2011-01-25
7821077 Semiconductor device 2010-10-26
7816766 Semiconductor device with compressive and tensile stresses Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami, Masashi Shima 2010-10-19
7791064 Semiconductor device and fabrication method thereof Yosuke Shimamune, Akira Katakami, Akiyoshi Hatada, Masashi Shima 2010-09-07
7683362 Semiconductor device and production method thereof Hiroyuki Ohta, Takashi Sakuma, Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami 2010-03-23
7667227 Semiconductor device and fabrication method thereof Yosuke Shimamune, Akira Katakami, Akiyoshi Hatada, Masashi Shima 2010-02-23
7649232 P-channel MOS transistor, semiconductor integrated circuit device and fabrication process thereof Kazuo Kawamura, Akira Katakami 2010-01-19
7626215 Semiconductor device and method of manufacturing the same Yosuke Shimamune, Masahiro Fukuda, Young Suk Kim, Akira Katakami, Akiyoshi Hatada +1 more 2009-12-01
7579617 Semiconductor device and production method thereof Yosuke Shimamune, Hiroyuki Ohta, Akiyoshi Hatada, Akira Katakami 2009-08-25
7518188 P-channel MOS transistor and fabrication process thereof Masashi Shima, Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami 2009-04-14
7476941 Semiconductor integrated circuit device and fabrication process thereof Masashi Shima, Yosuke Shimamune, Akiyoshi Hatada, Akira Katakami 2009-01-13
7432180 Method of fabricating a nickel silicide layer by conducting a thermal annealing process in a silane gas Yasunori Uchino, Kazuo Kawamura 2008-10-07
7429525 Fabrication process of a semiconductor device Yasunori Uchino, Kazuo Kawamura 2008-09-30
7378305 Semiconductor integrated circuit and fabrication process thereof Akiyoshi Hatada, Akira Katakami, Yosuke Shimamune, Masashi Shima, Hiroyuki Ohta 2008-05-27
7361613 Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method Mitsuaki Hori, Mayumi Shigeno 2008-04-22
7262465 P-channel MOS transistor and fabrication process thereof Akiyoshi Hatada, Akira Katakami, Yosuke Shimamune, Masashi Shima 2007-08-28