PK

Pon Sung Ku

FS Freeescale Semiconductor: 8 patents #392 of 3,767Top 15%
NU Nxp Usa: 3 patents #546 of 2,066Top 30%
📍 Gilbert, AZ: #203 of 1,739 inventorsTop 15%
🗺 Arizona: #3,328 of 32,909 inventorsTop 15%
Overall (All Time): #459,468 of 4,157,543Top 15%
11
Patents All Time

Issued Patents All Time

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
10074743 Trench MOSFET shield poly contact Ganming Qin, Edouard D. de Frésart, Michael F. Petras, Moaniss Zitouni, Dragan Zupac 2018-09-11
9680003 Trench MOSFET shield poly contact Ganming Qin, Edouard D. de Frésart, Michael F. Petras, Moaniss Zitouni, Dragan Zupac 2017-06-13
9553184 Edge termination for trench gate FET Moaniss Zitouni, Edouard D. de Frésart, Ganming Qin 2017-01-24
9419128 Bidirectional trench FET with gate-based resurf Moaniss Zitouni, Edouard D. de Frésart, Michael F. Petras, Ganming Qin, Evgueniy Stefanov +1 more 2016-08-16
9397213 Trench gate FET with self-aligned source contact Ganming Qin, Edouard D. de Frésart, Michael F. Petras, Moaniss Zitouni, Dragan Zupac 2016-07-19
9362394 Power device termination structures and methods Moaniss Zitouni, Edouard D. de Frésart, Ganming Qin 2016-06-07
9324800 Bidirectional MOSFET with suppressed bipolar snapback and method of manufacture Edouard D. de Frésart, Ganming Qin, Moaniss Zitouni, Dragan Zupac 2016-04-26
9293535 Power MOSFET current sense structure and method Peilin Wang, Jingjing Chen, Edouard D. de Frésart, Wenyi Li, Ganming Qin 2016-03-22
9178027 Bidirectional trench FET with gate-based resurf Moaniss Zitouni, Edouard D. de Frésart, Michael F. Petras, Ganming Qin, Evgueniy Stefanov +1 more 2015-11-03
8895394 Trench FET with source recess etch Ganming Qin, Edouard D. de Frésart, Peilin Wang 2014-11-25
8143126 Method for forming a vertical MOS transistor Jingjing Chen, Ganming Qin, Edouard D. de Frésart 2012-03-27