| 11853683 |
Learning-based analyzer for mitigating latch-up in integrated circuits |
David R. Gifford, Bernd Lienhard |
2023-12-26 |
|
| 11587822 |
Structures for improving radiation hardness and eliminating latch-up in integrated circuits |
David R. Gifford |
2023-02-21 |
|
| 11461531 |
Learning-based analyzer for mitigating latch-up in integrated circuits |
David R. Gifford, Bernd Lienhard |
2022-10-04 |
|
| 10825715 |
Structures for improving radiation hardness and eliminating latch-up in integrated circuits |
David R. Gifford |
2020-11-03 |
|
| 10107779 |
Sensing field effect transistor devices, systems in which they are incorporated, and methods of their fabrication |
Raymond M. Roop, Jose Fernandez Villasenor, Stephen R. Hooper |
2018-10-23 |
$10,248,000 |
| 10032904 |
Semiconductor device with non-isolated power transistor with integrated diode protection |
Hubert M. Bode, Weize Chen, Richard J. DeSouza, Andreas Laudenbach, Kurt U. Neugebauer |
2018-07-24 |
$12,329,000 |
| 9991356 |
Integrated circuits devices with counter-doped conductive gates |
Weize Chen, Richard J. De Souza, Md M. Hoque |
2018-06-05 |
$16,978,000 |
| 9978689 |
Ion sensitive field effect transistors with protection diodes and methods of their fabrication |
Md M. Hoque, Weize Chen, Richard J. De Souza |
2018-05-22 |
$10,145,000 |
| 9964516 |
Methods and apparatus for an ISFET |
Weize Chen, Richard J. De Souza, Md M. Hoque, John M. McKenna |
2018-05-08 |
$10,647,000 |
| 9927392 |
Sensing field effect transistor devices, systems in which they are incorporated, and methods of their fabrication |
Raymond M. Roop, Jose Fernandez Villasenor, Stephen R. Hooper |
2018-03-27 |
$7,152,000 |
| 9899500 |
Method of fabricating a tunable schottky diode with depleted conduction path |
Weize Chen, Xin Lin |
2018-02-20 |
$6,607,000 |
| 9857329 |
Protected sensor field effect transistors |
Weize Chen, Richard J. De Souza, Jose Fernandez Villasenor, Md M. Hoque, David E. Niewolny +1 more |
2018-01-02 |
$24,636,000 |
| 9818863 |
Integrated breakdown protection |
Weize Chen, Hubert M. Bode, Richard J. De Souza |
2017-11-14 |
$2,733,000 |
| 9780558 |
Semiconductor device and related protection methods |
Weize Chen, Richard J. De Souza, Mazhar Ul Hoque |
2017-10-03 |
$4,270,000 |
| 9741793 |
Semiconductor device with false drain |
Weize Chen |
2017-08-22 |
$9,182,000 |
| 9704853 |
Semiconductor device and driver circuit with an active device and isolation structure interconnected through a resistor circuit, and method of manufacture thereof |
Hubert M. Bode, Weize Chen, Richard J. De Souza |
2017-07-11 |
$9,981,000 |
| 9673188 |
Integrated electrostatic discharge (ESD) clamping for an LDMOS transistor device having a bipolar transistor |
Weize Chen |
2017-06-06 |
$8,247,000 |
| 9620496 |
Stacked protection devices with overshoot protection and related fabrication methods |
Weize Chen, Hubert M. Bode, Andreas Laudenbach, Kurt U. Neugebauer |
2017-04-11 |
$6,999,000 |
| 9607981 |
Semiconductor device and driver circuit with source and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
Weize Chen, Hubert M. Bode, Richard J. De Souza |
2017-03-28 |
$7,034,000 |
| 9599587 |
Methods and apparatus for an ISFET |
Weize Chen, Richard J. De Souza, Md M. Hoque, John M. McKenna |
2017-03-21 |
$13,590,000 |
| 9570440 |
Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
Weize Chen, Hubert M. Bode, Richard J. De Souza |
2017-02-14 |
$11,567,000 |
| 9559097 |
Semiconductor device with non-isolated power transistor with integrated diode protection |
Hubert M. Bode, Weize Chen, Richard J. DeSouza, Andreas Laudenbach, Kurt U. Neugebauer |
2017-01-31 |
$26,661,000 |
| 9553187 |
Semiconductor device and related fabrication methods |
Weize Chen, Richard J. De Souza, Mazhar Ul Hoque |
2017-01-24 |
$23,351,000 |
| 9541521 |
Enhanced sensitivity ion sensing devices |
Md M. Hoque, Weize Chen |
2017-01-10 |
$12,407,000 |
| 9537000 |
Semiconductor device with increased safe operating area |
Weize Chen |
2017-01-03 |
|
