DS

David Strand

ED Energy Conversion Devices: 24 patents #9 of 231Top 4%
TI Tps Ip: 12 patents #1 of 12Top 9%
OI Ovshinsky Innovation: 3 patents #2 of 4Top 50%
WO Wisconsin Oven: 2 patents #2 of 5Top 40%
📍 Burlington, WI: #7 of 182 inventorsTop 4%
🗺 Wisconsin: #554 of 40,088 inventorsTop 2%
Overall (All Time): #71,470 of 4,157,543Top 2%
42
Patents All Time

Issued Patents All Time

Showing 26–42 of 42 patents

Patent #TitleCo-InventorsDate
5534711 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom Stanford R. Ovshinsky, Wolodymyr Czubatyj, Patrick Klersy 1996-07-09
5534712 Electrically erasable memory elements characterized by reduced current and improved thermal stability Stanford R. Ovshinsky, Patrick Klersy 1996-07-09
5414271 Electrically erasable memory elements having improved set resistance stability Stanford R. Ovshinsky, Stephen J. Hudgens, Wolodymyr Czubatyj, Guy Wicker 1995-05-09
5406509 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom Stanford R. Ovshinsky, Qiuyi Ye, Wolodymyr Czubatyj 1995-04-11
5341328 Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life Stanford R. Ovshinsky, Stephen J. Hudgens, Wolodymyr Czubatyj, Guy Wicker 1994-08-23
5335219 Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements Stanford R. Ovshinsky, Stephen J. Hudgens, Wolodymyr Czubatyj, Jesus Gonzalez-Hernandez, Hellmut Fritzsche +3 more 1994-08-02
5296716 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom Stanford R. Ovshinsky, Wolodymyr Czubatyj, Quiyi Ye, Stephen J. Hudgens 1994-03-22
5166758 Electrically erasable phase change memory Stanford R. Ovshinsky, Stephen J. Hudgens, Wolodymyr Czubatyj, Guy Wicker 1992-11-24
5128099 Congruent state changeable optical memory material and device Stanford R. Ovshinsky 1992-07-07
4924436 Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite 1990-05-08
4876667 Data storage device having a phase change memory medium reversible by direct overwrite Randall R. Ross, Eric Bjornard 1989-10-24
4676646 Method and apparatus for controlling thickness of a layer of an optical data storage device by measuring an optical property of the layer John Vala 1987-06-30
4660175 Data storage device having novel barrier players encapsulating the data storage medium 1987-04-21
4622654 Liquid crystal light valve with memory Zvi Yaniv, John Vala 1986-11-11
4621032 Method of forming a data storage medium and data storage device by congruent sublimation John P. deNeufville 1986-11-04
4615969 Method and apparatus for making a stamping master for video disk replication 1986-10-07
4537670 Apparatus for making a stamping master for video disk replication 1985-08-27