Issued Patents All Time
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8986446 | Si-doped GaAs single crystal ingot and process for producing the same, and Si-doped GaAs single crystal wafer produced from Si-doped GaAs single crystal ingot | — | 2015-03-24 |
| 8747579 | Solder layer and device bonding substrate using the same and method for manufacturing such a substrate | Munenori Hashimoto, Masayuki Nakano | 2014-06-10 |
| 8581106 | Submount | Masayuki Nakano | 2013-11-12 |
| 8516692 | Solder layer, substrate for device joining utilizing the same and method of manufacturing the substrate | Munenori Hashimoto, Masayuki Nakano | 2013-08-27 |
| 8472208 | Submount and method of manufacturing the same | Masayuki Nakano | 2013-06-25 |
| 8404359 | Solder layer and electronic device bonding substrate and submount using the same | Masayuki Nakano | 2013-03-26 |
| 8310047 | Solder layer, heat sink using such a solder layer and method for manufacturing such a heat sink | Masayuki Nakano | 2012-11-13 |
| 7800096 | Light emitting semiconductor | Yutaka Ohta | 2010-09-21 |