Issued Patents All Time
Showing 26–35 of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7037789 | Stabilization of dopant concentration in semiconductor device having epitaxially-filled trench | Hitoshi Yamaguchi | 2006-05-02 |
| 7026248 | Method for manufacturing semiconductor device with semiconductor region inserted into trench | Nobuhiro Tsuji | 2006-04-11 |
| 6836001 | Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench | Hitoshi Yamaguchi, Jun Sakakibara, Nobuhiro Tsuji | 2004-12-28 |
| 6642577 | Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same | Yasushi Urakami | 2003-11-04 |
| 6534380 | Semiconductor substrate and method of manufacturing the same | Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda, Tadao Ooka, Akitoshi Yamanaka +1 more | 2003-03-18 |
| 6495883 | Trench gate type semiconductor device and method of manufacturing | Takumi Shibata, Yasushi Urakami, Toshiyuki Morishita | 2002-12-17 |
| 6495294 | Method for manufacturing semiconductor substrate having an epitaxial film in the trench | Yasushi Urakami, Kunihiro Onoda, Toshio Sakakibara, Yoshinori Otsuka | 2002-12-17 |
| 6406982 | Method of improving epitaxially-filled trench by smoothing trench prior to filling | Yasushi Urakami, Toshio Sakakibara, Hitoshi Yamaguchi, Nobuhiro Tsuji | 2002-06-18 |
| 6251754 | Semiconductor substrate manufacturing method | Hisayoshi Ohshima, Masaki Matsui, Kunihiro Onoda | 2001-06-26 |
| 6191007 | Method for manufacturing a semiconductor substrate | Masaki Matsui, Hisayoshi Ohshima, Kunihiro Onoda, Akiyoshi Asai, Takanari Sasaya +2 more | 2001-02-20 |