DF

David Fuard

CN CNRS: 1 patents #3,857 of 11,908Top 35%
CEA: 1 patents #3,381 of 7,956Top 45%
FT France Telecom: 1 patents #583 of 1,583Top 40%
📍 Montargis, FR: #40 of 123 inventorsTop 35%
Overall (All Time): #2,196,215 of 4,157,543Top 55%
2
Patents All Time

Issued Patents All Time

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
6818488 Process for making a gate for a short channel CMOS transistor structure Olivier Joubert, Giles Cunge, Johann Foucher, Marceline Bonvalot, Laurent Vallier 2004-11-16
6326302 Process for the anisotropic etching of an organic dielectric polymer material by a plasma gas and application in microelectronics Olivier Joubert 2001-12-04