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Integrated multilevel memory apparatus and method of operating same |
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Integrated memory device and method of operating same |
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Rectifier utilizing a grounded antenna |
Alan D. DeVilbiss |
2006-09-19 |
| 7078304 |
Method for producing an electrical circuit |
Alan D. DeVilbiss |
2006-07-18 |
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Encapsulated ferroelectric array |
— |
2006-05-30 |
| 6900536 |
Method for producing an electrical circuit |
Alan D. DeVilbiss |
2005-05-31 |
| 6777829 |
Rectifier utilizing a grounded antenna |
Alan D. DeVilbiss |
2004-08-17 |
| 6658608 |
Apparatus and method for testing ferroelectric memories |
David A. Kamp |
2003-12-02 |
| 6201731 |
Electronic memory with disturb prevention function |
David A. Kamp, George B. Coombe, Troy A. Meester |
2001-03-13 |
| 6178138 |
Asynchronously addressable clocked memory device and method of operating same |
David A. Kamp, Michael V. Cordoba, Ryan T. Hirose |
2001-01-23 |
| 6031754 |
Ferroelectric memory with increased switching voltage |
David A. Kamp, Michael V. Cordoba, George B. Coombe |
2000-02-29 |
| 5962069 |
Process for fabricating layered superlattice materials and AB0.sub.3 type metal oxides without exposure to oxygen at high temperatures |
Gunther Schindler, Walter Hartner, Carlos Mazure, Narayan Solayappan, Vikram Joshi |
1999-10-05 |
| 5849071 |
Liquid source formation of thin films using hexamethyl-disilazane |
Larry D. McMillan, Narayan Solayappan, Michael C. Scott, Carlos A. Paz de Araujo, Shinichiro Hayashi |
1998-12-15 |
| 5846597 |
Liquid source formation of thin films using hexamethyl-disilazane |
Larry D. McMillan, Narayan Solayappan, Michael C. Scott, Carlos A. Paz de Araujo, Shinichiro Hayashi |
1998-12-08 |
| 5843516 |
Liquid source formation of thin films using hexamethyl-disilazane |
Larry D. McMillan, Narayan Solayappan, Michael C. Scott, Carlos A. Paz de Araujo, Shinichiro Hayashi |
1998-12-01 |
| 4486943 |
Zero drain overlap and self aligned contact method for MOS devices |
William Dennis Ryden, Matthew Vernon Hanson, Alfred P. Gnadinger, James R. Adams, Jr. |
1984-12-11 |
| 4397077 |
Method of fabricating self-aligned MOS devices and independently formed gate dielectrics and insulating layers |
James R. Adams, Jr., Matthew Vernon Hanson, William Dennis Ryden |
1983-08-09 |