Issued Patents All Time
Showing 51–75 of 78 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4536459 | Photoconductive member having multiple amorphous layers | Teruo Misumi, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato | 1985-08-20 |
| 4536460 | Photoconductive member | Junichiro Kanbe, Teruo Misumi, Keishi Saitoh, Yoichi Osato | 1985-08-20 |
| 4529679 | Photoconductive member | Kyosuke Ogawa, Keishi Saitoh, Teruo Misumi, Junichiro Kanbe | 1985-07-16 |
| 4525442 | Photoconductive member containing an amorphous boron layer | Junichiro Kanbe, Tadaji Fukuda | 1985-06-25 |
| 4522905 | Amorphous silicon photoconductive member with interface and rectifying layers | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi | 1985-06-11 |
| 4501807 | Photoconductive member having an amorphous silicon layer | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi | 1985-02-26 |
| 4490454 | Photoconductive member comprising multiple amorphous layers | Teruo Misumi, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato | 1984-12-25 |
| 4490453 | Photoconductive member of a-silicon with nitrogen | Junichiro Kanbe, Tadaji Fukuda | 1984-12-25 |
| 4486521 | Photoconductive member with doped and oxygen containing amorphous silicon layers | Teruo Misumi, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato | 1984-12-04 |
| 4483911 | Photoconductive member with amorphous silicon-carbon surface layer | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato | 1984-11-20 |
| 4465750 | Photoconductive member with a -Si having two layer regions | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato | 1984-08-14 |
| 4464451 | Electrophotographic image-forming member having aluminum oxide layer on a substrate | Junichiro Kanbe, Tadaji Fukuda | 1984-08-07 |
| 4461820 | Amorphous silicon electrophotographic image-forming member having an aluminum oxide coated substrate | Junichiro Kanbe, Tadaji Fukuda | 1984-07-24 |
| 4460669 | Photoconductive member with .alpha.-Si and C, U or D and dopant | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato | 1984-07-17 |
| 4460670 | Photoconductive member with .alpha.-Si and C, N or O and dopant | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato | 1984-07-17 |
| 4452875 | Amorphous photoconductive member with .alpha.-Si interlayers | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi | 1984-06-05 |
| 4452874 | Photoconductive member with multiple amorphous Si layers | Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi | 1984-06-05 |
| 4443529 | Photoconductive member having an amorphous silicon photoconductor and a double-layer barrier layer | Junichiro Kanbe, Tadaji Fukuda | 1984-04-17 |
| 4423133 | Photoconductive member of amorphous silicon | Junichiro Kanbe, Kyosuke Ogawa, Keishi Saitoh, Yoichi Osato | 1983-12-27 |
| 4416962 | Electrophotographic member having aluminum oxide layer | Junichiro Kanbe, Tadaji Fukuda | 1983-11-22 |
| 4414319 | Photoconductive member having amorphous layer containing oxygen | Junichiro Kanbe, Tadaji Fukuda | 1983-11-08 |
| 4409308 | Photoconductive member with two amorphous silicon layers | Isamu Shimizu, Eiichi Inoue | 1983-10-11 |
| 4405702 | Electrophotographic image-forming member with ladder-type silicon resin layer | Junichiro Kanbe, Shigeru Ohno | 1983-09-20 |
| 4403026 | Photoconductive member having an electrically insulating oxide layer | Isamu Shimizu, Eiichi Inoue | 1983-09-06 |
| 4394426 | Photoconductive member with .alpha.-Si(N) barrier layer | Isamu Shimizu, Eiichi Inoue | 1983-07-19 |