Issued Patents All Time
Showing 51–75 of 90 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4601964 | Photoconductive member comprising layer of A-Si/A-Si(Ge)/A-Si(O) | Yukihiko Ohnuki, Shigeru Ohno | 1986-07-22 |
| 4600671 | Photoconductive member having light receiving layer of A-(Si-Ge) and N | Yukihiko Ohnuki, Shigeru Ohno | 1986-07-15 |
| 4598032 | Photoconductive member with a-Si; a-(Si/Ge) and a-(Si/C) layers | Yukihiko Ohnuki, Shigeru Ohno | 1986-07-01 |
| 4595645 | Photoconductive member having a-Ge and a-Si layers with nonuniformly distributed oxygen | Yukihiko Ohnuki, Shigeru Ohno | 1986-06-17 |
| 4595644 | Photoconductive member of A-Si(Ge) with nonuniformly distributed nitrogen | Yukihiko Ohnuki, Shigeru Ohno | 1986-06-17 |
| 4592985 | Photoconductive member having amorphous silicon layers | Kyosuke Ogawa, Shigeru Shirai, Teruo Misumi, Junichiro Kanbe | 1986-06-03 |
| 4592979 | Photoconductive member of amorphous germanium and silicon with nitrogen | Yukihiko Ohnuki, Shigeru Ohno | 1986-06-03 |
| 4592981 | Photoconductive member of amorphous germanium and silicon with carbon | Yukihiko Ohnuki, Shigeru Ohno | 1986-06-03 |
| 4592982 | Photoconductive member of layer of A-Ge, A-Si increasing (O) and layer of A-Si(C) or (N) | Yukihiko Ohnuki, Shigeru Ohno | 1986-06-03 |
| 4592983 | Photoconductive member having amorphous germanium and amorphous silicon regions with nitrogen | Yukihiko Ohnuki, Shigeru Ohno | 1986-06-03 |
| 4587190 | Photoconductive member comprising amorphous silicon-germanium and nitrogen | Yukihiko Ohnuki, Shigeru Ohno | 1986-05-06 |
| 4585719 | Photoconductive member comprising (SI-GE)-SI and N | Yukihiko Ohnuki, Shigeru Ohno | 1986-04-29 |
| 4585720 | Photoconductive member having light receiving layer of a-(Si-Ge) and C | Yukihiko Ohnuki, Shigeru Ohno | 1986-04-29 |
| 4585721 | Photoconductive member comprising amorphous germanium, amorphous silicon and nitrogen | Yukihiko Ohnuki, Shigeru Ohno | 1986-04-29 |
| 4579797 | Photoconductive member with amorphous germanium and silicon regions, nitrogen and dopant | Yukihiko Ohnuki, Shigeru Ohno | 1986-04-01 |
| 4579798 | Amorphous silicon and germanium photoconductive member containing carbon | Yukihiko Ohnuki, Shigeru Ohno | 1986-04-01 |
| 4572882 | Photoconductive member containing amorphous silicon and germanium | Yukihiko Ohnuki, Shigeru Ohno | 1986-02-25 |
| 4571370 | Amorphus silicon and germanium photoconductive member containing oxygen | — | 1986-02-18 |
| 4569894 | Photoconductive member comprising germanium atoms | Kozo Arao | 1986-02-11 |
| 4569893 | Amorphous matrix of silicon and germanium having controlled conductivity | Yukihiko Ohnuki, Shigeru Ohno | 1986-02-11 |
| 4569892 | Photoconductive member with amorphous silicon germanium regions and containing oxygen | — | 1986-02-11 |
| 4567127 | Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer | Yukihiko Ohnuki, Shigeru Ohno | 1986-01-28 |
| 4555465 | Photoconductive member of amorphous silicon | Kyosuke Ogawa, Shigeru Shirai, Teruo Misumi, Junichiro Kanbe | 1985-11-26 |
| 4547448 | Photoconductive member comprising silicon and oxygen | Shigeru Shirai, Kyosuke Ogawa, Junichiro Kanbe, Yoichi Osato, Teruo Misumi | 1985-10-15 |
| 4546008 | Method for forming a deposition film | Wataru Ando | 1985-10-08 |