WJ

Wilbur D. Johnston, Jr.

AT AT&T: 4 patents #4,399 of 18,772Top 25%
AG Agere Systems Optoelectronics Guardian: 1 patents #30 of 115Top 30%
AT American Telephone And Telegraph: 1 patents #132 of 699Top 20%
BL Bell Telephone Laboratories: 1 patents #567 of 1,445Top 40%
📍 Holmdel, NJ: #68 of 509 inventorsTop 15%
🗺 New Jersey: #6,180 of 69,400 inventorsTop 9%
Overall (All Time): #356,937 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
6282356 Optical waveguide device with enhanced stability William J. Minford, John W. Osenbach 2001-08-28
6211539 Semi-insulated indium phosphide based compositions Judith A. Long 2001-04-03
6172999 Process for making integrated laser/modulators 2001-01-09
6101204 Process for making integrated laser/modulators 2000-08-08
6064782 Edge receptive photodetector devices Philip J. Anthony, Orval George Lorimor, Dirk Joachim Muehlner 2000-05-16
4999315 Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers Robert F. Karlicek, Jr., Judith A. Long, Daniel Paul Wilt 1991-03-12
4935382 Method of making a semiconductor-insulator-semiconductor structure Charles W. Tu 1990-06-19
4888624 Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement Robert F. Karlicek, Jr., Judith A. Long, Daniel Paul Wilt 1989-12-19
4878956 Single crystal films of cubic group II fluorides on semiconductor compounds Charles W. Tu 1989-11-07
4870032 Method of fabricating single crystal films of cubic group II fluorides on semiconductor componds by molecular beam epitaxy Charles W. Tu 1989-09-26
4738934 Method of making indium phosphide devices Judith A. Long, Albert T. Macrander, Bertram Schwartz, Shobha Singh 1988-04-19
4716130 MOCVD of semi-insulating indium phosphide based compositions Judith A. Long 1987-12-29
4660208 Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement Judith A. Long, Daniel Paul Wilt 1987-04-21
4213801 Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers 1980-07-22