Issued Patents 2025
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12300722 | Selective liner on backside via and method thereof | Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang | 2025-05-13 |
| 12300727 | Process and structure for source/drain contacts | Meng-Huan Jao, Sheng-Tsung Wang, Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang | 2025-05-13 |
| 12300734 | Semiconductor device having air gap and method of fabricating thereof | Chia-Hao Chang, Sheng-Tsung Wang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang | 2025-05-13 |
| 12302607 | Backside gate contact | Huan-Chieh Su, Chun-Yuan Chen, Lo-Heng Chang, Li-Zhen Yu, Cheng-Chi Chuang +1 more | 2025-05-13 |
| 12300601 | Interconnect structure | Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang | 2025-05-13 |
| 12283521 | Methods of forming spacers for semiconductor devices including backside power rails | Li-Zhen Yu, Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang | 2025-04-22 |
| 12272621 | Buried conductive structure in semiconductor substrate | Kan-Ju Lin, Min-Hsuan Lu, Wei-Yip Loh, Hong-Mao Lee, Harry CHIEN | 2025-04-08 |
| 12266563 | Enlarging contact area and process window for a contact via | Li-Zhen Yu, Cheng-Chi Chuang, Chih-Hao Wang, Yu-Ming Lin | 2025-04-01 |
| 12261082 | Semiconductor devices with a nitrided capping layer | Po-Chin Chang, Shuen-Shin Liang, Sheng-Tsung Wang, Cheng-Chi Chuang, Chia-Hung Chu +3 more | 2025-03-25 |
| 12255070 | Semiconductor devices and methods of manufacturing | Min-Hsuan Lu, Kan-Ju Lin, Sheng-Tsung Wang, Hung-Yi Huang, Chih-Wei Chang +2 more | 2025-03-18 |
| 12255103 | Semiconductor structure with backside via contact and a protection liner layer | Li-Zhen Yu, Chia-Hao Chang, Huan-Chieh Su, Cheng-Chi Chuang, Yu-Ming Lin +1 more | 2025-03-18 |
| 12205896 | Contact via formation | Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang | 2025-01-21 |