Issued Patents 2025
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12191354 | Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween | Manuj Nahar, Vassil Antonov, Kamal M. Karda, Hung-Wei Liu, Jeffery B. Hull | 2025-01-07 |