KK

Kamal M. Karda

Micron: 16 patents #16 of 1,205Top 2%
LG Lodestar Licensing Group: 1 patents #12 of 56Top 25%
📍 Boise, ID: #7 of 575 inventorsTop 2%
🗺 Idaho: #8 of 1,024 inventorsTop 1%
Overall (2025): #1,857 of 469,880Top 1%
18
Patents 2025

Issued Patents 2025

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
12432898 Memory device having tiers of 2-transistor memory cells Durai Vishak Nirmal Ramaswamy, Haitao Liu, Karthik Sarpatwari 2025-09-30
12408388 Ferroelectric transistors and assemblies comprising ferroelectric transistors Haitao Liu, Durai Vishak Nirmal Ramaswamy 2025-09-02
12361977 Memory device having shared read/write data line for 2-transistor vertical memory cell Haitao Liu, Karthik Sarpatwari, Durai Vishak Nirmal Ramaswamy 2025-07-15
12349335 Memory device having 2-transistor vertical memory cell and shared channel region Karthik Sarpatwari, Durai Vishak Nirmal Ramaswamy, Haitao Liu 2025-07-01
12336288 Array of vertical transistors and method used in forming an array of vertical transistors Yi Fang Lee, Jaydip Guha, Lars Heineck, Si-Woo Lee, Terrence B. McDaniel +3 more 2025-06-17
12284805 String driver assemblies including two-dimensional materials, and related memory devices Akira Goda, Sanh D. Tang, Gurtej S. Sandhu, Litao Yang, Haitao Liu 2025-04-22
12283636 Devices including channel materials and passivation materials Haitao Liu 2025-04-22
12279434 NAND structures with polarized materials Albert Fayrushin, Gianpietro Carnevale, Aurelio Giancarlo Mauri 2025-04-15
12266660 Memory device having 2-transistor memory cell and access line plate Karthik Sarpatwari, Haitao Liu, Durai Vishak Nirmal Ramaswamy 2025-04-01
12256541 Apparatus and method including memory device having 2-transistor vertical memory cell Durai Vishak Nirmal Ramaswamy 2025-03-18
12218236 Devices including heterogeneous channels, and related memory devices, electronic systems, and methods Scott E. Sills, Ramanathan Gandhi, Durai Vishak Nirmal Ramaswamy, Yi Fang Lee 2025-02-04
12219750 Memory device having 2-transistor vertical memory cell and separate read and write gates Eric Carman, Durai Vishak Nirmal Ramaswamy, Richard E. Fackenthal, Karthik Sarpatwari, Haitao Liu +2 more 2025-02-04
12219758 Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies Haitao Liu, Durai Vishak Nirmal Ramaswamy, Yunfei Gao, Sanh D. Tang, Deepak Chandra Pandey 2025-02-04
12219783 Semiconductor devices and hybrid transistors Haitao Liu, Durai Vishak Nirmal Ramaswamy 2025-02-04
12213321 Memory device having 2-transistor vertical memory cell and conductive shield structure Richard E. Fackenthal, Durai Vishak Nirmal Ramaswamy 2025-01-28
12200928 Memory device having memory cell strings and separate read and write control gates Haitao Liu, Albert Fayrushin, Yingda Dong 2025-01-14
12200938 Driver placement in memories having stacked memory arrays Haitao Liu, Gurtej S. Sandhu, Sanh D. Tang, Akira Goda, Lifang Xu 2025-01-14
12191354 Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween Manuj Nahar, Vassil Antonov, Michael Mutch, Hung-Wei Liu, Jeffery B. Hull 2025-01-07