Issued Patents 2025
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12414380 | Method for forming an integrated chip (IC) including forming a through substrate via (TSV) in an isolation structure formed in a first opening that formed in a metal substrate layer | Harry-Hak-Lay Chuang, Hsin Fu Lin | 2025-09-09 |
| 12408439 | Integrated chip (IC) having conductive TSV extended through SOI substrate comprising a semiconductor device layer, an insulating layer and a metal layer | Harry-Hak-Lay Chuang, Hsin Fu Lin | 2025-09-02 |
| 12402378 | Semiconductor arrangement including first and second gate electrodes and method of manufacture | Yun-Chi Wu, Tsung-Yu Yang, Cheng-Bo Shu | 2025-08-26 |