Issued Patents 2025
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432976 | Thin film transistors having strain-inducing structures integrated with 2D channel materials | Chelsey Dorow, Kevin P. O'Brien, Carl Naylor, Sudarat Lee, Ashish Verma Penumatcha +1 more | 2025-09-30 |
| 12396217 | Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication | Chelsey Dorow, Kevin P. O'Brien, Carl Naylor, Uygar E. Avci, Sudarat Lee +4 more | 2025-08-19 |
| 12396254 | Stacked 2D CMOS with inter metal layers | Kevin P. O'Brien, Uygar E. Avci, Scott B. Clendenning, Chelsey Dorow, Sudarat Lee +4 more | 2025-08-19 |
| 12369382 | Integrated circuit structures with graphene contacts | Carl Naylor, Kevin P. O'Brien, Chelsey Dorow, Sudarat Lee, Ashish Verma Penumatcha +3 more | 2025-07-22 |
| 12349438 | Contact gating for 2D field effect transistors | Ashish Verma Penumatcha, Carl Naylor, Chelsey Dorow, Kevin P. O'Brien, Shriram Shivaraman +2 more | 2025-07-01 |
| 12324204 | Transistors including two-dimensional materials | Carl Naylor, Kevin P. O'Brien, Chelsey Dorow, Tanay Gosavi, Ashish Verma Penumatcha +2 more | 2025-06-03 |
| 12310101 | Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication | Ashish Verma Penumatcha, Seung Hoon Sung, Jack T. Kavalieros, Uygar E. Avci, Tristan A. Tronic +5 more | 2025-05-20 |
| 12278289 | TMD inverted nanowire integration | Kevin P. O'Brien, Carl Naylor, Chelsey Dorow, Tanay Gosavi, Ashish Verma Penumatcha +4 more | 2025-04-15 |
| 12266712 | Transition metal dichalcogenide nanosheet transistors and methods of fabrication | Ashish Verma Penumatcha, Kevin P. O'Brien, Chelsey Dorow, Carl Naylor, Tanay Gosavi +4 more | 2025-04-01 |
| 12266720 | Transistors with monocrystalline metal chalcogenide channel materials | Carl Naylor, Chelsey Dorow, Kevin P. O'Brien, Sudarat Lee, Ashish Verma Penumatcha +6 more | 2025-04-01 |