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Thin film transistors having strain-inducing structures integrated with 2D channel materials |
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Stacked 2D CMOS with inter metal layers |
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Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication |
Chelsey Dorow, Carl Naylor, Uygar E. Avci, Sudarat Lee, Ashish Verma Penumatcha +4 more |
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| 12375060 |
Digitally controlled lithographically-defined multi-frequency acoustic resonators |
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Integrated circuit structures with graphene contacts |
Carl Naylor, Kirby Maxey, Chelsey Dorow, Sudarat Lee, Ashish Verma Penumatcha +3 more |
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| 12349442 |
Thin film transistors having semiconductor structures integrated with 2D channel materials |
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| 12349438 |
Contact gating for 2D field effect transistors |
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| 12324204 |
Transistors including two-dimensional materials |
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| 12278289 |
TMD inverted nanowire integration |
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| 12266712 |
Transition metal dichalcogenide nanosheet transistors and methods of fabrication |
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| 12266720 |
Transistors with monocrystalline metal chalcogenide channel materials |
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