Issued Patents 2024
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12165912 | Semiconductor structure with air gap and method sealing the air gap | Hung-Chang Sun, Akira Mineji | 2024-12-10 |
| 12132091 | Work function layers for transistor gate electrodes | Chung-Liang Cheng, Chun-I Wu, Huang-Lin Chao | 2024-10-29 |
| 12107086 | Field effect transistor contact with reduced contact resistance | Su-Hao Liu, Yan-Ming Tsai, Chung-Ting Wei, Chih-Wei Chang, Chien-Hao Chen +1 more | 2024-10-01 |
| 12100745 | Dual metal capped via contact structures for semiconductor devices | Chung-Liang Cheng | 2024-09-24 |
| 12051746 | Semiconductor device structure with dielectric layer | Chung-Liang Cheng | 2024-07-30 |
| 12040364 | Semiconductor device structure | Hsueh Wen Tsau, Chun-I Wu, Huang-Lin Chao, I-Ming Chang, Chung-Liang Cheng +1 more | 2024-07-16 |
| 12034058 | Gate stack treatment for ferroelectric transistors | Cheng-Ming Lin, Sai-Hooi Yeong, Chi On Chui, Huang-Lin Chao | 2024-07-09 |
| 12009403 | Semiconductor structure with metal cap layer and method for manufacturing the same | Chung-Liang Cheng | 2024-06-11 |
| 11996328 | Cobalt fill for gate structures | Chung-Liang Cheng | 2024-05-28 |
| 11923430 | Gate structure and patterning method for multiple threshold voltages | Chung-Liang Cheng | 2024-03-05 |
| 11923367 | Low resistance fill metal layer material as stressor in metal gates | Mrunal A. Khaderbad, Keng-Chu Lin, Hsueh Wen Tsau | 2024-03-05 |
| 11901450 | Ferroelectric structure for semiconductor devices | Cheng-Ming Lin, Sai-Hooi Yeong, Bo-Feng Young, Chi On Chui, Chih-Yu Chang +1 more | 2024-02-13 |
| 11901242 | Gate structures for semiconductor devices | Chung-Liang Cheng | 2024-02-13 |
| 11901241 | Integrated circuit device with low threshold voltage | Chung-Liang Cheng | 2024-02-13 |
| 11862713 | Conformal transfer doping method for fin-like field effect transistor | Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Feng-Cheng Yang, Yen-Ming Chen | 2024-01-02 |