Issued Patents 2024
Showing 26–38 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11990529 | Air gap in inner spacers and methods of fabricating the same in field-effect transistors | Chien Ning Yao, Sai-Hooi Yeong, Kuan-Lun Cheng, Chih-Hao Wang | 2024-05-21 |
| 11974441 | Memory array including epitaxial source lines and bit lines | Sai-Hooi Yeong, Chih-Yu Chang, Chi On Chui, Yu-Ming Lin | 2024-04-30 |
| 11950427 | Ferroelectric memory device and method of forming the same | Chun-Chieh Lu, Sai-Hooi Yeong, Yu-Ming Lin, Chih-Yu Chang | 2024-04-02 |
| 11943933 | Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same | Mauricio Manfrini, Sai-Hooi Yeong, Han-Jong Chia, Yu-Ming Lin | 2024-03-26 |
| 11923252 | Semiconductor device and method for manufacturing the same | Sai-Hooi Yeong, Chi On Chui, Chih Chieh Yeh, Cheng-Hsien Wu, Chih-Sheng Chang +2 more | 2024-03-05 |
| 11915787 | Integrated circuit device and methods | Yu-Ming Lin, Shih-Lien Linus Lu, Han-Jong Chia, Sai-Hooi Yeong, Chia-En Huang +1 more | 2024-02-27 |
| 11910617 | Ferroelectric memory device and method of forming the same | Chun-Chieh Lu, Han-Jong Chia, Sai-Hooi Yeong, Yu-Ming Lin | 2024-02-20 |
| 11910615 | Memory device and manufacturing method thereof | Meng-Han Lin, Han-Jong Chia, Feng-Cheng Yang, Nuo Xu, Sai-Hooi Yeong +1 more | 2024-02-20 |
| 11901450 | Ferroelectric structure for semiconductor devices | Cheng-Ming Lin, Sai-Hooi Yeong, Ziwei Fang, Chi On Chui, Chih-Yu Chang +1 more | 2024-02-13 |
| 11903189 | Three-dimensional memory and fabricating method thereof | Sai-Hooi Yeong, Chih-Yu Chang, Han-Jong Chia, Chenchen Jacob Wang, Yu-Ming Lin | 2024-02-13 |
| 11901411 | Semiconductor device and method | Sai-Hooi Yeong, Chi On Chui | 2024-02-13 |
| 11864392 | Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same | Han-Jong Chia, Sai-Hooi Yeong, Chenchen Jacob Wang, Meng-Han Lin, Yu-Ming Lin | 2024-01-02 |
| 11862219 | Memory cell and method of operating the same | Sai-Hooi Yeong, Chao-I Wu, Chih-Yu Chang, Yu-Ming Lin | 2024-01-02 |