Issued Patents 2024
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12131960 | Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method | Daichi Dojima, Koji Ashida, Tomoya Ihara | 2024-10-29 |
| 12098476 | Method for producing a SiC substrate via an etching step, growth step, and peeling step | Kiyoshi Kojima | 2024-09-24 |
| 12065758 | Method for manufacturing a SiC substrate by simultaneously forming a growth layer on one surface and etching another surface of a SiC base substrate | Natsuki Yoshida, Kazufumi Aoki | 2024-08-20 |
| 12020928 | SiC semiconductor substrate, method for manufacturing same, and device for manufacturing same | Koji Ashida, Tomoya Ihara, Daichi Dojima | 2024-06-25 |
| 12014939 | Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate | — | 2024-06-18 |
| 11972949 | SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate | Natsuki Yoshida, Kazufumi Aoki | 2024-04-30 |
| 11955354 | Semiconductor substrate manufacturing device applicable to large-diameter semiconductor substrate | — | 2024-04-09 |
| 11952678 | Method for manufacturing etched SiC substrate and grown SiC substrate by material tranportation and method for epitaxial growth by material transportation | — | 2024-04-09 |
| 11932967 | SiC single crystal manufacturing method, SiC single crystal manufacturing device, and SiC single crystal wafer | — | 2024-03-19 |