Issued Patents 2024
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12068415 | Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance | Kai Zhao, Shahab Siddiqui, Daniel James Dechene, Charlotte DeWan Adams | 2024-08-20 |
| 11990412 | Buried power rails located in a base layer including first, second, and third etch stop layers | Ruilong Xie, Stuart A. Sieg, Somnath Ghosh, Kisik Choi, Alexander Reznicek | 2024-05-21 |
| 11888048 | Gate oxide for nanosheet transistor devices | Shahab Siddiqui, Koji Watanabe, Charlotte DeWan Adams, Kai Zhao, Daniel James Dechene | 2024-01-30 |