Issued Patents 2024
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12183795 | Notch shape of trench gate bottom corner for better breakdown voltage of power MOSFET and IGBT with good trade off to ron and ox reliability | Conghui Liu, Peng Li | 2024-12-31 |
| 12154944 | Super junction power device | Conghui Liu, Huan WANG, Longkang Yang | 2024-11-26 |
| 12154943 | Super junction power device and method of making the same | Conghui Liu, Huan WANG, Longkang Yang | 2024-11-26 |
| 12148793 | High voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material | Min Li, Richard Ru-Gin Chang | 2024-11-19 |
| 12136647 | Super junction power device and method of making the same | Conghui Liu, Huan WANG, Longkang Yang, Richard Ru-Gin Chang | 2024-11-05 |
| 12131946 | Method to form contacts with multiple depth by enhanced CESL | Zhaosheng Meng, Xian Zhang | 2024-10-29 |
| 12094873 | SiGe HBT with graphene extrinsic base and methods | Richard Ru-Gin Chang | 2024-09-17 |
| 11984500 | Structure and method of new power MOS and IGBT with built-in multiple VT'S | Dongyang Zhou, Jinpeng Qiu, Peng Li, Conghui Liu | 2024-05-14 |
| 11978702 | Simultaneous self-forming hea barrier and Cu seeding layers for Cu interconnect | Yong Zhao, Zhaosheng Meng | 2024-05-07 |
| 11862674 | High voltage semiconductor device comprising a combined junction terminal protection structure with a ferroelectric material and method of making the same | Min Li, Richard Ru-Gin Chang | 2024-01-02 |