RZ

Ruo Fang Zhang

YC Yangtze Memory Technologies Co.: 2 patents #72 of 236Top 35%
Overall (2023): #113,302 of 537,848Top 25%
2
Patents 2023

Issued Patents 2023

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
11805643 Method of fabrication thereof a multi-level vertical memory device including inter-level channel connector Enbo Wang, Haohao Yang, Qianbing Xu, Yushi Hu, Qian Tao 2023-10-31
11737263 3D NAND memory device and method of forming the same Enbo Wang, Haohao Yang, Qianbing Xu, Yushi Hu, Fushan Zhang 2023-08-22