| 11837629 |
Power semiconductor devices having gate trenches and buried edge terminations and related methods |
Daniel Jenner Lichtenwalner, Brett Hull |
2023-12-05 |
| 11810912 |
Semiconductor devices having asymmetric integrated gate resistors for balanced turn-on/turn-off behavior |
In-Hwan Ji, Jae Hyung Park |
2023-11-07 |
| 11791378 |
Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods |
Alexander V. Suvorov, Vipindas Pala, Daniel Jenner Lichtenwalner, Qingchun Zhang |
2023-10-17 |
| 11721755 |
Methods of forming semiconductor power devices having graded lateral doping |
Philipp Steinmann, Jae Hyung Park, Vaishno Dasika |
2023-08-08 |
| 11662371 |
Semiconductor devices for improved measurements and related methods |
James Richmond |
2023-05-30 |
| 11600724 |
Edge termination structures for semiconductor devices |
Thomas E. Harrington, III |
2023-03-07 |
| 11579645 |
Device design for short-circuitry protection circuitry within transistors |
James Richmond, Philipp Steinmann |
2023-02-14 |