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Edward Robert Van Brunt, Brett Hull |
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Kijeong Han, Sei-Hyung Ryu |
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Gate trench power semiconductor devices having improved deep shield connection patterns |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
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Interface layer control methods for semiconductor power devices and semiconductor devices formed thereof |
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2023-06-20 |
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Semiconductor power devices having multiple gate trenches and methods of forming such devices |
Woongsun Kim, Sei-Hyung Ryu, Naeem Islam |
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Power semiconductor devices including a trenched gate and methods of forming such devices |
Sei-Hyung Ryu, Naeem Islam, Woongsun Kim, Matt N. McCain, Joe W. McPherson |
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Gate trench power semiconductor devices having improved deep shield connection patterns |
Naeem Islam, Woongsun Kim, Sei-Hyung Ryu |
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Trenched power device with segmented trench and shielding |
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2023-01-24 |
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Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices |
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2023-01-24 |