Issued Patents 2023
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11557671 | Semiconductor device having trench gate electrodes formed in first pillars including source layers formed in the first pillars being deeper into the substrate than first source layers in second pillars | Masayuki Furuhashi | 2023-01-17 |