FH

Fu-Yuan Hsieh

NC Nami Mos Co.: 2 patents #1 of 1Top 100%
📍 New Taipei, TW: #282 of 1,884 inventorsTop 15%
Overall (2023): #156,107 of 537,848Top 30%
2
Patents 2023

Issued Patents 2023

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
11777000 SiC trench MOSFET with low on-resistance and switching loss — 2023-10-03
11600725 Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation — 2023-03-07