SC

Shih-Chieh Chang

TSMC: 13 patents #135 of 3,577Top 4%
Overall (2022): #4,631 of 548,613Top 1%
13
Patents 2022

Issued Patents 2022

Showing 1–13 of 13 patents

Patent #TitleCo-InventorsDate
11527655 Semiconductor structure with source/drain multi-layer structure and method for forming the same Chun-Chieh Wang, Yu-Ting Lin, Yueh-Ching Pai, Huai-Tei Yang 2022-12-13
11522086 Semiconductor device and methods of forming same Chih-Yu Ma, Shahaji B. More, Yi-Min Huang 2022-12-06
11476349 FinFET structures and methods of forming the same Shahaji B. More, Cheng-Han Lee 2022-10-18
11444199 Method of manufacturing a semiconductor device and a semiconductor device Shahaji B. More, Cheng-Han Lee, Pei-Shan LEE 2022-09-13
11404561 Semiconductor device and manufacturing method thereof Shahaji B. More 2022-08-02
11404574 P-type strained channel in a fin field effect transistor (FinFET) device Shahaji B. More, Huai-Tei Yang, Shu Kuan, Cheng-Han Lee 2022-08-02
11393898 Method of manufacturing a semiconductor device and a semiconductor device Shu Kuan, Shahaji B. More, Chien-Chih Lin, Cheng-Han Lee 2022-07-19
11367784 Method of manufacturing a semiconductor device and a semiconductor device Shahaji B. More, Chien-Chih Lin, Cheng-Han Lee, Shu Kuan 2022-06-21
11342228 Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Cheng-Han Lee 2022-05-24
11315838 FinFET device and method of forming same Chien-Chih Lin, Kun-Yu Lee, Shahaji B. More, Cheng-Han Lee 2022-04-26
11302782 In-situ straining epitaxial process Hsiu-Ting Chen, Yi-Ming Huang, Hsing-Chi Chen, Pei-Ren Jeng 2022-04-12
11233123 Fully strained channel Shahaji B. More, Huai-Tei Yang, Zheng-Yang Pan, Chun-Chieh Wang, Cheng-Han Lee 2022-01-25
11222963 Semiconductor device and method Shahaji B. More 2022-01-11