Issued Patents 2022
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11476349 | FinFET structures and methods of forming the same | Shih-Chieh Chang, Shahaji B. More | 2022-10-18 |
| 11469305 | Source/drain structure for semiconductor device | Shahaji B. More | 2022-10-11 |
| 11444199 | Method of manufacturing a semiconductor device and a semiconductor device | Shahaji B. More, Shih-Chieh Chang, Pei-Shan LEE | 2022-09-13 |
| 11404574 | P-type strained channel in a fin field effect transistor (FinFET) device | Shahaji B. More, Huai-Tei Yang, Shih-Chieh Chang, Shu Kuan | 2022-08-02 |
| 11393898 | Method of manufacturing a semiconductor device and a semiconductor device | Shu Kuan, Shahaji B. More, Chien-Chih Lin, Shih-Chieh Chang | 2022-07-19 |
| 11367784 | Method of manufacturing a semiconductor device and a semiconductor device | Shahaji B. More, Chien-Chih Lin, Shih-Chieh Chang, Shu Kuan | 2022-06-21 |
| 11342228 | Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof | Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang | 2022-05-24 |
| 11315838 | FinFET device and method of forming same | Chien-Chih Lin, Kun-Yu Lee, Shahaji B. More, Shih-Chieh Chang | 2022-04-26 |
| 11233123 | Fully strained channel | Shahaji B. More, Huai-Tei Yang, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang | 2022-01-25 |
| 11217892 | Antenna structure | Te-Chang Lin, Huo-Ying Chang, Min-Hui Ho | 2022-01-04 |