Issued Patents 2022
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11276578 | Semiconductor device with fin isolation | Chang-Yin Chen, Che-Cheng Chang | 2022-03-15 |
| 11271087 | Metal gate process for FinFET device improvement | Che-Cheng Chang, Horng-Huei Tseng | 2022-03-08 |
| 11271086 | Semiconductor device and manufacturing method thereof | Shih-Chang Tsai, Wen-Shuo Hsieh, Te-Yung Liu | 2022-03-08 |
| 11264282 | Gate formation process | Chi-Sheng Lai, Wei-Chung Sun, Li Chen, Kuei-Yu Kao | 2022-03-01 |
| 11264283 | Multi-channel devices and methods of manufacture | Shih-Yao Lin, Chih-Chung Chiu, Kuei-Yu Kao, Chen-Ping Chen | 2022-03-01 |
| 11257931 | Gate structure of field effect transistor with footing | Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Yung-Jung Chang | 2022-02-22 |
| 11251289 | FinFET device comprising plurality of dummy protruding features | Che-Cheng Chang, Po-Chi Wu, Horng-Huei Tseng | 2022-02-15 |
| 11251284 | Dummy gate cutting process and resulting gate structures | Shih-Yao Lin, Shu-Uei Jang, Ya-Yi Tsai, Shu-Yuan Ku | 2022-02-15 |
| 11233139 | Fin field-effect transistor and method of forming the same | Shih-Yao Lin, Shu-Yuan Ku, Tzu-Chung Wang, Shu-Uei Jang, Ya-Yi Tsai +1 more | 2022-01-25 |
| 11232979 | Method of forming trenches | Che-Cheng Chang | 2022-01-25 |
| 11217683 | Semiconductor structure with extending gate structure and method for forming the same | Che-Cheng Chang | 2022-01-04 |
| 11217586 | Semiconductor device having dummy fin physically separating the first and second gate stacks | Shih-Yao Lin, Yun-Ting Chou, Jr-Jung Lin | 2022-01-04 |