Issued Patents 2022
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11320388 | SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor | Ling Guo | 2022-05-03 |
| 11315839 | Evaluation method and manufacturing method of SiC epitaxial wafer | Yoshitaka Nishihara | 2022-04-26 |
| 11293115 | Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less | Ling Guo | 2022-04-05 |
| 11249027 | SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer | Yoshitaka Nishihara | 2022-02-15 |