Issued Patents 2022
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11538513 | Memory element for weight update in a neural network | Fabio Pellizzer | 2022-12-27 |
| 11532347 | Performing refresh operations of non-volatile memory to mitigate read disturb | Lingming Yang, Nevil N. Gajera, John Christopher Sancon | 2022-12-20 |
| 11527287 | Drift aware read operations | Nevil N. Gajera, Lingming Yang, John F. Schreck | 2022-12-13 |
| 11514983 | Identify the programming mode of memory cells based on cell statistics obtained during reading of the memory cells | Fabio Pellizzer, Nevil N. Gajera | 2022-11-29 |
| 11508437 | Restoring memory cell threshold voltages | Lingming Yang, Nevil N. Gajera | 2022-11-22 |
| 11475970 | Bipolar read retry | Yen-Chun Lee, Nevil N. Gajera | 2022-10-18 |
| 11476252 | Memory device having 2-transistor vertical memory cell and shared channel region | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, Haitao Liu | 2022-10-18 |
| 11417381 | Memory device having shared read/write access line for 2-transistor vertical memory cell | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy | 2022-08-16 |
| 11404130 | Evaluation of background leakage to select write voltage in memory devices | Nevil N. Gajera, Zhongyuan Lu | 2022-08-02 |
| 11367484 | Multi-step pre-read for write operations in memory devices | Yen-Chun Lee, Nevil N. Gajera | 2022-06-21 |
| 11367483 | Techniques for applying multiple voltage pulses to select a memory cell | Josephine T. Hamada, Mingdong Cui, Joseph M. McCrate, Jessica Chen | 2022-06-21 |
| 11355554 | Sense lines in three-dimensional memory arrays, and methods of forming the same | Lingming Yang, Fabio Pellizzer, Nevil N. Gajera, Lei Wei | 2022-06-07 |
| 11355209 | Accessing a multi-level memory cell | Xuan Anh Tran, Jessica Chen, Jason A. Durand, Nevil N. Gajera, Yen-Chun Lee | 2022-06-07 |
| 11335684 | Memory device having 2-transistor memory cell and access line plate | Kamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy | 2022-05-17 |
| 11295811 | Increase of a sense current in memory | Zhongyuan Lu, Robert J. Gleixner | 2022-04-05 |
| 11296094 | Memory device having shared access line for 2-transistor vertical memory cell | Kamal M. Karda, Durai Vishak Nirmal Ramaswamy, Haitao Liu | 2022-04-05 |
| 11295822 | Multi-state programming of memory cells | Nevil N. Gajera | 2022-04-05 |
| 11222690 | Vertical 3D single word line gain cell with shared read/write bit line | Kamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy | 2022-01-11 |