Issued Patents 2022
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11515427 | Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance | Kai Zhao, Shahab Siddiqui, Daniel James Dechene, Charlotte DeWan Adams | 2022-11-29 |