Issued Patents 2022
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11527432 | Bulk substrates with a self-aligned buried polycrystalline layer | Anthony K. Stamper, Ian McCallum-Cook, Siva P. Adusumilli | 2022-12-13 |
| 11476289 | Photodetector with buried airgap reflectors | Siva P. Adusumilli, Vibhor Jain, Alvin J. Joseph | 2022-10-18 |
| 11469178 | Metal-free fuse structures | Anthony K. Stamper, John J. Ellis-Monaghan, John J. Pekarik, Vibhor Jain | 2022-10-11 |
| 11444149 | Polysilicon resistor with continuous u-shaped polysilicon resistor elements and related method | Siva P. Adusumilli, Yves T. Ngu, Mickey H. Yu | 2022-09-13 |
| 11437522 | Field-effect transistors with a polycrystalline body in a shallow trench isolation region | Michel J. Abou-Khalil, Mark D. Levy, Rajendran Krishnasamy, John J. Ellis-Monaghan, Anthony K. Stamper | 2022-09-06 |
| 11424377 | Photodiode with integrated, light focusing element | Rajendran Krishnasamy, John J. Ellis-Monaghan, Ramsey Hazbun | 2022-08-23 |
| 11411081 | Field effect transistor (FET) stack and methods to form same | Anthony K. Stamper, Vibhor Jain, John J. Ellis-Monaghan | 2022-08-09 |
| 11410872 | Oxidized cavity structures within and under semiconductor devices | Siva P. Adusumilli, John J. Ellis-Monaghan, Anthony K. Stamper | 2022-08-09 |
| 11380759 | Transistor with embedded isolation layer in bulk substrate | Uzma Rana, Anthony K. Stamper, Johnatan A. Kantarovsky, Siva P. Adusumilli | 2022-07-05 |
| 11378743 | Optical components in the back-end-of-line stack of a photonics chip using plural cores vertically stacked | Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen A. Nummy, Edward W. Kiewra | 2022-07-05 |
| 11374040 | Pixel arrays including heterogenous photodiode types | John J. Ellis-Monaghan, Rajendran Krishnasamy, Ramsey Hazbun | 2022-06-28 |
| 11374143 | Fin-based photodetector structure | Ajey Poovannummoottil Jacob, Yusheng Bian | 2022-06-28 |
| 11333558 | Boolean temperature sensing using phase transition material | Vibhor Jain, Anthony K. Stamper, John J. Pekarik | 2022-05-17 |
| 11322639 | Avalanche photodiode | Mark D. Levy, Siva P. Adusumilli, John J. Ellis-Monaghan, Vibhor Jain, Ramsey Hazbun +3 more | 2022-05-03 |
| 11322387 | Bulk wafer switch isolation | Uzma Rana, Anthony K. Stamper, Brett T. Cucci | 2022-05-03 |
| 11315825 | Semiconductor structures including stacked depleted and high resistivity regions | Michel J. Abou-Khalil, Aaron L. Vallett, Bojidha Babu, John J. Ellis-Monaghan, Anthony K. Stamper | 2022-04-26 |
| 11316045 | Vertical field effect transistor (FET) with source and drain structures | Anthony K. Stamper, Aaron L. Vallett, John J. Ellis-Monaghan | 2022-04-26 |
| 11296190 | Field effect transistors with back gate contact and buried high resistivity layer | Vibhor Jain, Anthony K. Stamper, John J. Ellis-Monaghan, John J. Pekarik | 2022-04-05 |
| 11282883 | Trench-based photodiodes | John J. Ellis-Monaghan, Vibhor Jain, Anthony K. Stamper, John J. Pekarik | 2022-03-22 |
| 11271079 | Wafer with crystalline silicon and trap rich polysilicon layer | Anthony K. Stamper, John J. Pekarik, Vibhor Jain, John J. Ellis-Monaghan | 2022-03-08 |
| 11271077 | Trap-rich layer in a high-resistivity semiconductor layer | Anthony K. Stamper, Vibhor Jain, John J. Pekarik, John J. Ellis-Monaghan | 2022-03-08 |
| 11264499 | Transistor devices with source/drain regions comprising an interface layer that comprises a non-semiconductor material | John J. Pekarik, Anthony K. Stamper, Vibhor Jain, John J. Ellis-Monaghan | 2022-03-01 |
| 11264457 | Isolation trenches augmented with a trap-rich layer | Mark D. Levy, Siva P. Adusumilli, Alvin J. Joseph, Anthony K. Stamper | 2022-03-01 |
| 11221506 | Polarization switches including a phase change material | Yusheng Bian, Ajey Poovannummoottil Jacob | 2022-01-11 |