Issued Patents 2021
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11200924 | Method of minimizing read-disturb-write effect of SRAM circuit and SRAM circuit thereof | Jui-Che Tsai, Chia-En Huang, Yu-Hao Hsu | 2021-12-14 |
| 11195567 | Balanced negative bitline voltage for a write assist circuit | Jui-Che Tsai, Chia-En Huang, Chia-Cheng Chen | 2021-12-07 |
| 11189356 | One-time-programmable memory | Hiroki Noguchi | 2021-11-30 |
| 11183261 | Test device for memory, method for detecting hardware failure in memory device, and test apparatus of memory array | Hiroki Noguchi, Ku-Feng Lin | 2021-11-23 |
| 11107530 | Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells | Perng-Fei Yuh, Ku-Feng Lin, Jui-Che Tsai, Hiroki Noguchi, Fu-An Wu | 2021-08-31 |
| 11094701 | Layout structure of storage cell and method thereof | Meng-Sheng Chang, Chia-En Huang | 2021-08-17 |
| 11094387 | Multi-fuse memory cell circuit and method | Meng-Sheng Chang, Chia-En Huang, Shao-Yu Chou | 2021-08-17 |
| 11088151 | 4Cpp SRAM cell and array | Hidehiro Fujiwara, Chia-En Huang, Yen-Huei Chen | 2021-08-10 |
| 11018260 | Non-volatile memory device with reduced area | Meng-Sheng Chang, Chia-En Huang, Yao-Jen Yang | 2021-05-25 |
| 10978144 | Integrated circuit and operating method thereof | Chia-En Huang, Hidehiro Fujiwara, Jui-Che Tsai, Yen-Huei Chen | 2021-04-13 |
| 10971505 | Memory devices and methods of manufacturing thereof | Meng-Sheng Chang, Chia-En Huang, Yi-Hsun Chiu | 2021-04-06 |