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Vertical transistor structure with buried channel and resurf regions and method of manufacturing the same |
Sundarsan UPPILI |
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| 11195909 |
LDMOS transistors with breakdown voltage clamps |
Vijay Parthasarathy, Marco A. Zuniga |
2021-12-07 |
| 11088688 |
Configurations of composite devices comprising of a normally-on FET and a normally-off FET |
— |
2021-08-10 |
| 11075264 |
Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods |
Edward Robert Van Brunt, Alexander V. Suvorov, Daniel Jenner Lichtenwalner, Qingchun Zhang |
2021-07-27 |
| 11069804 |
Integration of HVLDMOS with shared isolation region |
— |
2021-07-20 |
| 10964694 |
Multi-transistor device including first and second LDMOS transistors having respective drift regions separated in a thickness direction by a shared RESURF layer |
Vijay Parthasarathy, Badredin Fatemizadeh, Marco A. Zuniga, John Xia |
2021-03-30 |
| 10950719 |
Seminconductor device with spreading layer |
Lin Cheng, Anant Agarwal, John Williams Palmour, Edward Robert Van Brunt |
2021-03-16 |
| 10950695 |
Silicon carbide planar MOSFET with wave-shaped channel regions |
Rahul R. Potera, Tony Witt |
2021-03-16 |
| RE48380 |
Vertical power transistor device |
Anant Agarwal, Lin Cheng, Daniel Jenner Lichtenwalner, John Williams Palmour |
2021-01-05 |