Issued Patents 2020
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10861943 | Transistor with multiple GaN-based alloy layers | Dong Seup Lee, Jungwoo Joh, Pinghai Hao | 2020-12-08 |
| 10811530 | Trench gate trench field plate vertical mosfet | Marie Denison, Guru Mathur | 2020-10-20 |
| 10714474 | High voltage CMOS with triple gate oxide | Binghua Hu, Pinghai Hao, Seetharaman Sridhar, Jarvis Benjamin Jacobs | 2020-07-14 |
| 10707324 | Group IIIA-N HEMT with a tunnel diode in the gate stack | Chang Soo Suh, Dong Seup Lee, Jungwoo Joh, Naveen Tipirneni | 2020-07-07 |
| 10680093 | HEMT having conduction barrier between drain fingertip and source | Jungwoo Joh, Naveen Tipirneni, Chang Soo Suh | 2020-06-09 |
| 10651274 | High-voltage drain extended MOS transistor | Sunglyong Kim, Seetharaman Sridhar | 2020-05-12 |
| 10629674 | Trench isolated capacitor | Hideaki Kawahara, Binghua Hu | 2020-04-21 |
| 10601422 | Integrated high-side driver for P-N bimodal power device | Yongxi Zhang, Philip L. Hower, Salvatore Giombanco, Filippo Marino, Seetharaman Sridhar | 2020-03-24 |
| 10580775 | Dual deep trenches for high voltage isolation | Binghua Hu, Alexei Sadovnikov, Guru Mathur | 2020-03-03 |
| 10571511 | Systems and methods for dynamic Rdson measurement | Alex Paikin, Colin Johnson, Tathagata Chatterjee | 2020-02-25 |
| 10559681 | High voltage lateral junction diode device | Sunglyong Kim, Seetharaman Sridhar | 2020-02-11 |
| 10535731 | Lateral MOSFET with buried drain extension layer | Marie Denison, Philip L. Hower | 2020-01-14 |