| 10861943 |
Transistor with multiple GaN-based alloy layers |
Dong Seup Lee, Jungwoo Joh, Pinghai Hao |
2020-12-08 |
| 10811530 |
Trench gate trench field plate vertical mosfet |
Marie Denison, Guru Mathur |
2020-10-20 |
| 10714474 |
High voltage CMOS with triple gate oxide |
Binghua Hu, Pinghai Hao, Seetharaman Sridhar, Jarvis Benjamin Jacobs |
2020-07-14 |
| 10707324 |
Group IIIA-N HEMT with a tunnel diode in the gate stack |
Chang Soo Suh, Dong Seup Lee, Jungwoo Joh, Naveen Tipirneni |
2020-07-07 |
| 10680093 |
HEMT having conduction barrier between drain fingertip and source |
Jungwoo Joh, Naveen Tipirneni, Chang Soo Suh |
2020-06-09 |
| 10651274 |
High-voltage drain extended MOS transistor |
Sunglyong Kim, Seetharaman Sridhar |
2020-05-12 |
| 10629674 |
Trench isolated capacitor |
Hideaki Kawahara, Binghua Hu |
2020-04-21 |
| 10601422 |
Integrated high-side driver for P-N bimodal power device |
Yongxi Zhang, Philip L. Hower, Salvatore Giombanco, Filippo Marino, Seetharaman Sridhar |
2020-03-24 |
| 10580775 |
Dual deep trenches for high voltage isolation |
Binghua Hu, Alexei Sadovnikov, Guru Mathur |
2020-03-03 |
| 10571511 |
Systems and methods for dynamic Rdson measurement |
Alex Paikin, Colin Johnson, Tathagata Chatterjee |
2020-02-25 |
| 10559681 |
High voltage lateral junction diode device |
Sunglyong Kim, Seetharaman Sridhar |
2020-02-11 |
| 10535731 |
Lateral MOSFET with buried drain extension layer |
Marie Denison, Philip L. Hower |
2020-01-14 |