MY

Ming-Hua Yu

TSMC: 14 patents #112 of 3,471Top 4%
Overall (2020): #4,368 of 565,922Top 1%
14
Patents 2020

Issued Patents 2020

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
10879128 Semiconductor device and method of forming same Tsz-Mei Kwok, Tsung-Hsi Yang, Jeng-Wei Yu, Li-Wei Chou, Chii-Horng Li 2020-12-29
10861975 FinFET with rounded source/drain profile Chih-Pin Tsao, Pei-Ren Jeng, Tze-Liang Lee 2020-12-08
10854748 Semiconductor device having first and second epitaxial materials Lilly Su, Pang-Yen Tsai, Tze-Liang Lee, Chii-Horng Li, Yen-Ru Lee 2020-12-01
10847638 Increasing source/drain dopant concentration to reduced resistance Yi-Jing Lee 2020-11-24
10840355 Increasing source/drain dopant concentration to reduced resistance Yi-Jing Lee 2020-11-17
10811537 Semiconductor device having fins Che-Yu Lin, Tze-Liang Lee, Chan-Lon Yang 2020-10-20
10797164 FinFETs having epitaxial capping layer on fin and methods for forming the same Chih-Pin Tsao, Hou-Yu Chen 2020-10-06
10784375 Source/drain recess in a semiconductor device Eric Peng, Chao-Cheng Chen, Chii-Horng Li, Shih-Hao Lo, Syun-Ming Jang +2 more 2020-09-22
10770359 Semiconductor device and method Yi-Jing Lee, Tsung-Hsi Yang 2020-09-08
10749029 Semiconductor device and manufacturing method thereof Kun-Mu Li, Tsz-Mei Kwok, Chan-Lon Yang 2020-08-18
10727229 Structure and method for semiconductor device Yi-Jing Lee, Tsz-Mei Kwok 2020-07-28
10714487 Semiconductor device and manufacturing method of a semiconductor device Yi-Jing Lee, Tsz-Mei Kwok, Kun-Mu Li 2020-07-14
10658468 Epitaxial growth methods and structures thereof Tetsuji Ueno, Chan-Lon Yang 2020-05-19
10546784 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Yi-Jing Lee, Jeng-Wei Yu, Li-Wei Chou, Tsz-Mei Kwok 2020-01-28