Issued Patents 2020
Showing 1–6 of 6 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10879355 | Profile design for improved device performance | Kun-Mu Li, Yen-Ru Lee | 2020-12-29 |
| 10861971 | Doping profile for strained source/drain region | Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li | 2020-12-08 |
| 10797173 | MOS devices with non-uniform p-type impurity profile | Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li | 2020-10-06 |
| 10734520 | MOS devices having epitaxy regions with reduced facets | Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok | 2020-08-04 |
| 10727342 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Chii-Horng Li, Tze-Liang Lee | 2020-07-28 |
| 10707328 | Method of forming epitaxial fin structures of finFET | Kun-Mu Li | 2020-07-07 |