Issued Patents 2020
Showing 1–16 of 16 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10873232 | Electric power unit | Nobuyuki Kaneko | 2020-12-22 |
| 10810776 | Image processing device and image processing method | Takahiro Tsuge, Hidenori Karasawa, Hiromi Iizuka, Ryo Miyake, Hiroshi Nakayama | 2020-10-20 |
| 10770596 | Semiconductor device and method for manufacturing the same | Shunpei Yamazaki, Jun Koyama, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao +2 more | 2020-09-08 |
| 10750093 | Image processing device and image processing method | Yukiko Hatakeyama, Kouei Kiyo, Tamaki TAKEUCHI, Rie HABUTA, Akinari Motohiro +3 more | 2020-08-18 |
| 10738963 | Vehicle lamp | Takahiro Totsuka, Masayuki Mochizuki | 2020-08-11 |
| 10741828 | Positive electrode active material including lithium cobaltate coated with lithium titanate and magnesium oxide | Teruaki OCHIAI, Takahiro Kawakami, Mayumi MIKAMI, Yohei MOMMA, Ayae TSURUTA | 2020-08-11 |
| 10741233 | Semiconductor memory device | Ryousuke Takizawa | 2020-08-11 |
| 10704760 | Vehicle lamp | — | 2020-07-07 |
| 10688339 | Balance training apparatus and control method for balance training apparatus | Yu Sasaki | 2020-06-23 |
| 10679514 | Training system and ankle-joint torque estimating method | Takahiro Fujishima | 2020-06-09 |
| 10671232 | Information processing apparatus, and part generating and using method | Kae Okazawa, Junichirou Sakata, Kazuma Takahashi, Kunihito Sawai | 2020-06-02 |
| 10658517 | Semiconductor device and method for manufacturing the same | Shunpei Yamazaki, Motoki NAKASHIMA | 2020-05-19 |
| 10644164 | Oxide semiconductor film and semiconductor device | Kengo Akimoto, Shunpei Yamazaki | 2020-05-05 |
| 10611308 | Image generation device and image generation method | Yukiko Hatakeyama, Kouei Kiyo, Tamaki TAKEUCHI, Rie HABUTA, Akinari Motohiro +3 more | 2020-04-07 |
| 10579187 | Display control apparatus, display control method and display control program | Junichirou Sakata, Kazuma Takahashi | 2020-03-03 |
| 10566459 | Semiconductor device having a first region comprising silicon, oxygen and at least one metal element formed between an oxide semiconductor layer and an insulating layer | Shunpei Yamazaki, Akiharu Miyanaga, Hideyuki Kishida, Junichiro Sakata | 2020-02-18 |