Issued Patents 2020
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10868238 | Magnetic tunnel junction integration without patterning process | Xia Li, Wei-Chuan Chen | 2020-12-15 |
| 10833254 | Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory | Chando Park, Jimmy Jianan Kan, Peiyuan Wang | 2020-11-10 |
| 10811068 | Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications | Xia Li, Wei-Chuan Chen, Wah Nam Hsu | 2020-10-20 |
| 10803942 | Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods | Seong-Ook Jung, Byungkyu Song, Sehee Lim, Sungryul Kim | 2020-10-13 |
| 10740017 | Dynamic memory protection | Chando Park, Wei-Chuan Chen, Sungryul Kim, Adam E. Newham, Rashid Ahmed Akbar Attar | 2020-08-11 |
| 10636962 | Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data | Chando Park, Sungryul Kim | 2020-04-28 |
| 10615988 | Compact and reliable physical unclonable function devices and methods | Xia Li, Bin Yang, Gengming Tao | 2020-04-07 |
| 10547460 | Message-based key generation using physical unclonable function (PUF) | Peiyuan Wang, Chando Park, Jimmy Jianan Kan | 2020-01-28 |
| 10534047 | Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity | Wei-Chuan Chen, Wah Nam Hsu, Xia Li, Nicholas Ka Ming Stevens-Yu | 2020-01-14 |